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학술지 Efects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
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저자
김호성, 금대명, 고영호, 한원석
발행일
202212
출처
Nanoscale Research Letters, v.17, pp.1-7
ISSN
1556-276X
출판사
Springer
DOI
https://dx.doi.org/10.1186/s11671-022-03762-9
협약과제
22ZB1100, ICT 창의기술 개발, 백용순
초록
GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550혻°C low-temperature (LT)-DFL and 660혻°C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD) values of LT-DFL and HT-DFL were 5.2 × 107혻cm?닋2 and 1.5 × 107혻cm?닋2, respectively. The 1.5 × 107혻cm?닋2 of TDD in HT-DFL is reduced by almost one order compared to the 1.2 × 108혻cm?닋2 of that in the control sample without DFLs. The annihilation process was mainly observed in the HT-DFL by a transmission electron microscope, resulting in a lower TDD. The 500-nm-thick GaAs bulk layer and InAs QDs were regrown on GaAs-on-Si templates and the optical properties were also evaluated by photoluminescence (PL). The highest PL peak intensity of the HT-DFL indicates that less non-radiative recombination in both the GaAs bulk and QDs occurred due to the reduced TDD. The GaAs p?밿?뱊 diodes were also fabricated to analyze the bulk leakage (JB) and the surface leakage current. The JB of HT-DFL shows the lowest value of 3.625 × 10??7 A/cm?닋2 at applied bias voltage of 1혻V, which is 20 times lower than the JB of the control sample without DFLs. This supports that the high-temperature growth of DFL can make a good performance GaAs device on Si.
KSP 제안 키워드
Applied bias voltage, Control sample, High Temperature, InAs QDs, Low temperature(LT), Metal-Organic, Nonradiative recombination, Organic vapor, Peak intensity, SI GaAs, Surface leakage current
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