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학술지 Three-Stacked CMOS Power Amplifier to Increase Output Power With Stability Enhancement for mm-Wave Beamforming Systems
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저자
정하연, 이희동, 박봉혁, 장승현, 공선우, 박창근
발행일
202306
출처
IEEE Transactions on Microwave Theory and Techniques, v.71 no.6, pp.2450-2464
ISSN
0018-9480
출판사
IEEE
DOI
https://dx.doi.org/10.1109/TMTT.2022.3228539
초록
In this study, an mm-wave band complementary metal–oxide–semiconductor (CMOS) power amplifier (PA) with a two-stage differential structure was designed. An analysis of the designed PA is presented and a new structure is proposed to eliminate the possibility of oscillation in the PA, which has high gain and high output power. The designed driver stage consists of a pair of cascode amplifiers and can be advantageously applied in beamforming systems as the PA phase is converted to 0 $^{\circ}$ /180 $^{\circ}$ with the on/off of a common-gate (CG) bias voltage. The power stage was designed with a three-stacked structure to obtain a high output power. The stability was improved using RC and capacitive feedbacks in the power stage. We implemented the PA using the 65-nm RF CMOS process. The designed PA used supply voltages of 2.0 and 3.3 V for the driver and power stages, respectively, and its saturated output power was measured as 24.7 dBm at 22.0 GHz. In this case, P $_{\mathrm{1\,dB}}$ was 20.6 dBm and the peak power added efficiency (PAE) was 26.0%.
KSP 제안 키워드
3 V, As 2, CMOS Process, CMOS power amplifier, Differential structure, High output power, Peak power, Power added efficiency(PAE), Power stage, RF CMOS, Saturated output power