ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Cited 0 time in scopus Download 281 time Share share facebook twitter linkedin kakaostory
저자
장성재, 김동석, 김태우, 배영호, 정현욱, 최일규, 노윤섭, 이상흥, 김성일, 안호균, 강동민, 임종원
발행일
202303
출처
Nanomaterials, v.13 no.5, pp.1-13
ISSN
2079-4991
출판사
MDPI
DOI
https://dx.doi.org/10.3390/nano13050898
협약과제
22JU1200, 질화갈륨 반도체를 사용한 위성통신용 내방사선 송수신 MMIC 국산화 기술 개발, 장성재
초록
Recently, we reported that device performance degradation mechanisms, which are generated by the 款-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the 款-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si3N4 and HfO2 gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO2 layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si3N4 gate insulator, despite the HfO2 gate insulator exhibiting better radiation resistance compared to the Si3N4 gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO2 gate insulator. Unlike the 款-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator.
KSP 제안 키워드
5 nm, Carrier mobility, Displacement Damage, Drain current, GaN-Based, Gate insulator, High electron mobility transistor(HEMT), Metal-insulator-semiconductor(MIS), Proton Irradiation, Stress measurement, Threshold voltage shift
본 저작물은 크리에이티브 커먼즈 저작자 표시 (CC BY) 조건에 따라 이용할 수 있습니다.
저작자 표시 (CC BY)