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학술지 25-31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications
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저자
안현배, 지홍구, 최윤호, 이상훈, 강동민, 한정환
발행일
202301
출처
IEEE Microwave and Wireless Technology Letters, v.33 no.1, pp.47-50
ISSN
2771-957X
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2022.3201075
협약과제
22HB3700, 5G 기지국용 배열 안테나를 위한 고출력 RF Front-End 기술 개발, 지홍구
초록
This letter presents a gallium nitride (GaN) high electron mobility transistor (HEMT)-based three-stage low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) that can apply to the fifth-generation (5G) new radio base station applications. The designed GaN-based LNA MMIC utilizes a hybrid-matching topology with double-shunt capacitors at input and output (I/O) matching networks to achieve broad return loss (RL) and bandwidth characteristics across 5G frequency range two bands. The design is fabricated in a 0.15 $\mu $ m GaN on silicon carbide technology and attains small signal gains greater than 21 dB, noise figures of 2.4–2.9 dB, 1-dB compression points greater than 19.1 dBm, output third-order intercept points greater than 28.5 dBm, and I/O RLs greater than 10 dB at 25–31 GHz band. The implemented design consumes a power of approximately 300 mW.
KSP 제안 키워드
5G base station, Base station applications, Fifth Generation(5G), Frequency Range, GHz band, GaN on silicon, GaN-Based, High electron mobility transistor(HEMT), Microwave monolithic integrated circuits(MMIC), Return loss(RL), Shunt Capacitors