$\mu $ m GaN on silicon carbide technology and attains small signal gains greater than 21 dB, noise figures of 2.4–2.9 dB, 1-dB compression points greater than 19.1 dBm, output third-order intercept points greater than 28.5 dBm, and I/O RLs greater than 10 dB at 25–31 GHz band. The implemented design consumes a power of approximately 300 mW." /> $\mu $ m GaN on silicon carbide technology and attains small signal gains greater than 21 dB, noise figures of 2.4–2.9 dB, 1-dB compression points greater than 19.1 dBm, output third-order intercept points greater than 28.5 dBm, and I/O RLs greater than 10 dB at 25–31 GHz band. The implemented design consumes a power of approximately 300 mW." />

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Journal Article 25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications
Cited 9 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Hyun Bae Ahn, Hong-Gu Ji, Yunho Choi, Sanghun Lee, Dong Min Kang, Junghwan Han
Issue Date
2023-01
Citation
IEEE Microwave and Wireless Technology Letters, v.33, no.1, pp.47-50
ISSN
2771-957X
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LMWC.2022.3201075
Abstract
This letter presents a gallium nitride (GaN) high electron mobility transistor (HEMT)-based three-stage low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) that can apply to the fifth-generation (5G) new radio base station applications. The designed GaN-based LNA MMIC utilizes a hybrid-matching topology with double-shunt capacitors at input and output (I/O) matching networks to achieve broad return loss (RL) and bandwidth characteristics across 5G frequency range two bands. The design is fabricated in a 0.15 $\mu $ m GaN on silicon carbide technology and attains small signal gains greater than 21 dB, noise figures of 2.4–2.9 dB, 1-dB compression points greater than 19.1 dBm, output third-order intercept points greater than 28.5 dBm, and I/O RLs greater than 10 dB at 25–31 GHz band. The implemented design consumes a power of approximately 300 mW.
KSP Keywords
5G base station, Base station applications, Fifth-Generation(5G), Frequency range, GHz band, GaN on silicon, GaN-Based, Gallium nitride (gan), High-electron mobility transistor(HEMT), Input-Output, Microwave Integrated Circuits(MICs)
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