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Conference Paper Fully Integrated CMOS Wideband Power Amplifier for Fifth Generation Mobile Communications
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Authors
Bonghyuk Park, Hui-Dong Lee, Seunghyun Jang, Sunwoo Kong, Seunghun Wang, Jung-hwan Hwang
Issue Date
2023-06
Citation
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2023, pp.548-551
Publisher
IEEE
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/ITC-CSCC58803.2023.10212682
Abstract
This paper describes a power amplifier(PA) that performs frequency range 2(FR2) for fifth generation mobile networks (5G) using 65nm bulk CMOS devices. The power amplifier with two-stage cascode architecture achieved a small signal gain of 29.2 dB, the output 1-dB compression power (OP1dB) of 20.35 dBm, and the power added efficiency at peak power of 27.1% at 28 GHz under 2.2-V supply voltage. At 29GHz the small signal gain is 28.8 dB, the OP1dB is 20.29 dBm, and the power-added efficiency at peak power is 26.9% under 2.2-V supply voltage.
KSP Keywords
28 GHz, Bulk CMOS, CMOS devices, Fifth Generation Mobile Networks, Fifth generation mobile communications, Fifth-Generation(5G), Frequency range, Peak power, Power added efficiency(PAE), Small signal gain, Supply voltage