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Conference Paper Fully Integrated CMOS Wideband Power Amplifier for Fifth Generation Mobile Communications
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Authors
Bonghyuk Park, Hui-Dong Lee, Seunghyun Jang, Sunwoo Kong, Seunghun Wang, Jung-hwan Hwang
Issue Date
2023-06
Citation
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2023, pp.548-551
Publisher
IEEE
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/ITC-CSCC58803.2023.10212682
Abstract
This paper describes a power amplifier(PA) that performs frequency range 2(FR2) for fifth generation mobile networks (5G) using 65nm bulk CMOS devices. The power amplifier with two-stage cascode architecture achieved a small signal gain of 29.2 dB, the output 1-dB compression power (OP1dB) of 20.35 dBm, and the power added efficiency at peak power of 27.1% at 28 GHz under 2.2-V supply voltage. At 29GHz the small signal gain is 28.8 dB, the OP1dB is 20.29 dBm, and the power-added efficiency at peak power is 26.9% under 2.2-V supply voltage.
KSP Keywords
28 GHz, Bulk CMOS, CMOS devices, Fifth Generation(5G), Fifth Generation Mobile Networks, Fifth generation mobile communications, Frequency Range, Fully integrated, Peak power, Power added efficiency(PAE), Small signal gain