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Journal Article 100-Gb/s/λ PAM-4 EAM-integrated DBR-LD Supporting Multiple Sub-Channels within 1.29 μm window
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Authors
Oh Kee Kwon, Chul Wook Lee, Su Ik Park, Kyoung Su Park, Ki Soo Kim
Issue Date
2023-09
Citation
Journal of Lightwave Technology, v.41, no.18, pp.6015-6020
ISSN
0733-8724
Publisher
Optical Society of America
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/JLT.2023.3268235
Abstract
We present a distributed Bragg reflector-laser diode (DBR-LD) monolithically integrated with an electroabsorption modulator (EAM) offering a 100-Gb/s pulse amplitude modulation 4-level (PAM-4) signal per sub-channel under a CWDM window of 1.29 μm. For the integrated structure, the DBR-LD and EAM were implemented using a trenched waveguide in the tuning sections for achieving energy-efficient wavelength-tuning and a deep ridge waveguide with an optimized structure for a 100-Gb/s PAM-4 operation, respectively. The fabricated chip shows a threshold current of approximately 12 mA and a tuning range of greater than 13 nm, which corresponds to a wavelength band capable of supporting 16 channels with a 150-GHz grid, while maintaining a side mode suppression ratio of greater than 40 dB. In dynamic tests, the results show clear 100-Gb/s PAM-4 eye openings with an outer extinction ratio of more than 4 dB and a transmitter dispersion eye closure quaternary of less than 1.5 dB for all measured channels.
KSP Keywords
4-level pulse amplitude modulation(PAM-4), Distributed Bragg reflector, Dynamic test, Electroabsorption modulator(EAM), Extinction Ratio(ER), Laser diode, Optimized structure, Sub-channels, Threshold current, Tuning Range, Wavelength tuning
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CC BY