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Conference Paper
Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology
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- Authors
- Youn Sub Noh, Hyun Wook Jung
- Issue Date
- 2023-07
- Citation
- PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797
- Language
- English
- Type
- Conference Paper
- Abstract
- A Ku-band high power amplifier (PA) monolithic microwave integrated circuit (MMIC) with 35W output power is demonstrated with 0.15 µm gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The 2-stage MMIC exhibits 25.2 ~ 27.5 dB of small signal gain, 45 ~ 46.1 dBm of output power, and 29.2 ~ 39% of power added efficiency (PAE) over the 13 ~ 15 GHz frequency range. The developed PA MMIC with all matching networks is as small as 3.75 mm×4 mm , generating output power density per MMIC area of 2,108 ~ 2,716mW/mm 2 .
- KSP Keywords
- 15 GHz, Band 3, Frequency Range, GaN HEMT technology, Gallium nitride (gan), Integrated circuit(IC), Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Output power density, Power added efficiency(PAE), Power amplifier MMIC