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Conference Paper Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology
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Authors
Youn Sub Noh, Hyun Wook Jung
Issue Date
2023-07
Citation
PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/PIERS59004.2023.10221363
Project Code
22NU1200, 군단정찰 무인기체계용 Ku band 고출력 증폭 모듈, Youn Sub Noh
Abstract
A Ku-band high power amplifier (PA) monolithic microwave integrated circuit (MMIC) with 35W output power is demonstrated with 0.15 µm gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The 2-stage MMIC exhibits 25.2 ~ 27.5 dB of small signal gain, 45 ~ 46.1 dBm of output power, and 29.2 ~ 39% of power added efficiency (PAE) over the 13 ~ 15 GHz frequency range. The developed PA MMIC with all matching networks is as small as 3.75 mm×4 mm , generating output power density per MMIC area of 2,108 ~ 2,716mW/mm 2 .
KSP Keywords
15 GHz, Band 3, Frequency Range, GaN HEMT technology, High electron mobility transistor(HEMT), High power amplifier(HPA), Ku-Band, Microwave monolithic integrated circuits(MMIC), Output power density, Power added efficiency(PAE), Power amplifier MMIC