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Conference Paper
Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application
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- Authors
- Hyun-Wook Jung, Il-Gyu Choi, Sung-Jae Chang, Hyeon-Seok Jung, Su-Min Choi, Ho-Kyun Ahn, Dong-Min Kang, Dae-Hyun Kim, Jong-Won Lim
- Issue Date
- 2023-10
- Citation
- The Electrochemical Society (ECS) Meeting 2023, pp.1-1
- Language
- English
- Type
- Conference Paper
- Project Code
- 23JH1500, Localization technology development of radiation hardness transceiver MMIC using GaN semiconductor for satellite communication , Sungjae Chang
- KSP Keywords
- AlGaN/GaN HEMTs, RF application, T-shaped gate