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Conference Paper
Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications
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- Authors
- Sung-Jae Chang, Hyeon-Seok Jeong, Hyun-Wook Jung, Su-Min Choi, Il-Gyu Choi, Youn-Sub Noh, Seong-Il Kim, Sang-Heung Lee, Ho-Kyun Ahn, Dong-Min Kang, Dae-Hyun Kim, Jong-Won Lim
- Issue Date
- 2023-10
- Citation
- The Electrochemical Society (ECS) Meeting 2023, pp.1-1
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- GaN-Based, RF performance, X-band applications, gate capacitance