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Conference Paper Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications
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Authors
Sung-Jae Chang, Hyeon-Seok Jeong, Hyun-Wook Jung, Su-Min Choi, Il-Gyu Choi, Youn-Sub Noh, Seong-Il Kim, Sang-Heung Lee, Ho-Kyun Ahn, Dong-Min Kang, Dae-Hyun Kim, Jong-Won Lim
Issue Date
2023-10
Citation
The Electrochemical Society (ECS) Meeting 2023, pp.1-1
Publisher
Electrochemical Society (ECS)
Language
English
Type
Conference Paper
KSP Keywords
GaN-Based, RF performance, X-band applications, gate capacitance