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Conference Paper O-band InAlGaAs IA-EML with quantum well intermixed passive waveguide
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Authors
Seungchul Lee, Namje Kim, Miran Park, O-Kyun Kwon
Issue Date
2023-05
Citation
Compound Semiconductor Week (CSW) 2023, pp.559-560
Language
English
Type
Conference Paper
Project Code
23HB3100, Development of 56Gbps optical devices and components for mobile/optical Internet access, Kwon O-Kyun
Abstract
InAlGaAs IA-EML is a representative device for high-temperature and high-speed operation in the field of optical communication. However, passive absorption by the waveguide region is induced due to the identical active layer. This is the main cause of deteriorating the modulation characteristics of IA-EML. Therefore, we applied quantum well intermixing to the waveguide region. Consequently, the passive absorption was reduced, and superior modulation characteristics were confirmed even in detuning between the gain peak and lasing wavelength of less than 25 nm.
KSP Keywords
5 nm, Active Layer, High Temperature, Quantum Well(QW), Quantum Well Intermixing(QWI), high-speed operation, optical communications