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Journal Article A 275-GHz InP HBT H-Band Amplifier with Transmission Line-Based Capacitively Coupled Resonator Matching Technique
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Authors
Chan-Gyu Choi, Hyun-Hak Jeong, Seung-Hyun Cho, Sooyeon Kim, Ho-Jin Song
Issue Date
2023-11
Citation
IEEE Transactions on Terahertz Science and Technology, v.13, no.6, pp.659-670
ISSN
2156-342X
Publisher
Institute of Electrical and Electronics Engineers
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/TTHZ.2023.3320930
Abstract
This article presents transmission line-based capacitively coupled resonator matching techniques for THz amplifiers and demonstrates the idea in a three-stage differential H-band amplifier in indium phosphide (InP) 250-nm double heterojunction bipolar transistor technology for a general-purpose waveguide gain block. We propose two types of symmetrical capacitively coupled resonator matching circuits with transmission lines, which are effective for replacing low-quality lumped elements at subterahertz frequencies. For high stability and high gain, the cascode topology was optimized with series and shunt interdevice matching circuits. The amplifiers were fabricated in two versions; one with folded rat-race baluns for on-chip measurement and the other with on-chip dipole couplers for split-block waveguide packaging. From 252 to 295 GHz and 258 to 293 GHz, the measured peak gains were 23 dB in the on-wafer amplifier and 20.8 dB in the packaged amplifier, respectively, achieved with a 3.6-V supply at 46 mA and a 3.0-V supply at 37 mA.
KSP Keywords
5 GHz, Cascode Topology, Coupled resonators, Double heterojunction bipolar transistor(DHBT), H-Band, Heterojunction Bipolar Transistors(HBTs), InP HBT, Indium phosphide, Line-based, Matching techniques, Rat-race