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Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
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- Authors
- Hyun-Wook Jung, Il-Gyu Choi, Do-Hyun Kim, Hyeon-Seok Jung, Su-Min Choi, Sung-Jae Chang, Ho-Kyun Ahn, Jong-Won Lim, Dong-Min Kang, Dae-Hyun Kim, Sang Min Won
- Issue Date
- 2024-02
- Citation
- Materials Science in Semiconductor Processing, v.170, pp.1-5
- ISSN
- 1369-8001
- Publisher
- Elsevier Ltd.
- Language
- English
- Type
- Journal Article
- Abstract
- AlGaN/GaN HEMTs have been regarded as the most promising option for achieving high-frequency power amplifier in various applications, including wireless communication, aerospace, and radar systems. To enable their use at even higher frequency, we conducted a study to enhance the frequency characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) on a silicon substrate. By employing a hydrogen silsesquioxane (HSQ)-assisted gate, AlGaN/GaN HEMT with an LG of 0.17 μm and LSD of 5 μm exhibited a VTH of 4.5 V, ID.max of 885 mA/mm, and gm.max of 253 mS/mm. The planar-gate without HSQ shows VTH of 4.4 V, ID.max of 876 mA/mm, and gm.max of 258 mS/mm. The DC characteristics are comparable to those observed in planar-gate HEMT with a conventional gate structure. Though the DC characteristics of both devices are similar, the HSQ-assisted gate HEMT exhibits a higher fT/fmax of 55/89 GHz, whereas the planar-gate HEMT yields an fT/fmax of 38/64 GHz. The 32% reduction in the total extrinsic gate capacitance (Cgs + Cgd) is the major contributor to the improved frequency performance of the HSQ-assisted gate AlGaN/GaN HEMT. The adoption of HSQ-assisted gate AlGaN/GaN HEMTs presents itself as a highly advantageous choice for achieving higher-frequency operations. © 2023 Elsevier Inc. All rights reserved.
- KSP Keywords
- AlGaN/GaN HEMTs, DC Characteristics, Frequency characteristics, High frequency(HF), High-electron mobility transistor(HEMT), High-frequency power amplifier, Higher frequency, Hydrogen silsesquioxane(HSQ), Planar-gate, Radar system, Silicon substrate