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Journal Article Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate

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Authors: Hyun-Wook Jung, Il-Gyu Choi, Do-Hyun Kim, Hyeon-Seok Jung, Su-Min Choi, Sung-Jae Chang, Ho-Kyun Ahn, Jong-Won Lim, Dong-Min Kang, Dae-Hyun Kim, Sang Min Won

Issue Date: 2024-02

Citation: Materials Science in Semiconductor Processing, v.170, pp.1-5

ISSN: 1369-8001

Publisher: Elsevier Ltd.

Language: English

Type: Journal Article

DOI: https://dx.doi.org/10.1016/j.mssp.2023.107985

KSP Keywords: AlGaN/GaN HEMTs, Hydrogen Silsesquioxane

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