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Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology
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- Authors
- Sunwoo Kong, Seunghyun Jang, Seunghun Wang, Hui-Dong Lee, Bong-Hyuk Park, Seok-Bong Hyun, Junghwan Hawang
- Issue Date
- 2023-10
- Citation
- International Conference on Consumer Electronics (ICCE) 2023 : Asia, pp.1-3
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- The paper discussed the feasibility of using CMOS for D-band wireless communication. We designed and measured an amplifier unit cell using the BULK CMOS 40-nm process. The unit cell achieved a gain of 1.21 dB at 145 GHz and a bandwidth of 36.4 GHz, with a power consumption of 3 mA at 1 V. This shows that CMOS can be used to achieve the desired performance and bandwidth for D-band wireless communication, while also being more cost-effective than compound semiconductor processes.
- KSP Keywords
- 45 GHz, Bulk CMOS, Cell characterization, D-band, Power Consumption, Semiconductor process, amplifier design, compound semiconductor, cost-effective, unit cell, wireless communication