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Journal Article Characteristics of Ultrathin Indium Oxide Thin-Film Transistors with Diverse Channel Lengths Fabricated by Atomic Layer Deposition

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Authors: Ju-Hun Lee, Seung-Youl Kang, Jong-Heon Yang, Jae-Eun Pi, Chi-Sun Hwang, Jaehyun Moon

Issue Date: 2024-07

Citation: Physica Status Solidi (B): Basic Research, v.261 no.7, pp.1-6

ISSN: 0370-1972

Publisher: John Wiley & Sons Ltd.

Language: English

Type: Journal Article

DOI: https://dx.doi.org/10.1002/pssb.202300323

Project Code: 23JC1100, Technologies development of core materials for ultra high resolution / highly flexible display backplane., Hwang Chi-Sun

KSP Keywords: Atomic Layer Deposition, Thin-Film Transistor(TFT), indium oxide, oxide thin-film transistors, thin film(TF)

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