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Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
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- Authors
- Hongrae Joh, Sooji Nam, Minhyun Jung, Hunbeom Shin, Sung Haeng Cho, Sanghun Jeon
- Issue Date
- 2023-11
- Citation
- ACS Applied Materials & Interfaces, v.15, no.44, pp.51339-51349
- ISSN
- 1944-8244
- Publisher
- American Chemical Society
- Language
- English
- Type
- Journal Article
- KSP Keywords
- Memory applications, in-memory, low temperature