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학술대회
Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channel and Organic Ferroelectric Gate Insulator
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- 발행일
- 201006
- 출처
- Asian Meeting on Ferroelectricity (AMF) 2010 / Asian Meeting on Electroceramics (AMEC) 2010, pp.321-321
- 출판사
- 한국세라믹학회
- 협약과제
- 10MB3700, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
- KSP 제안 키워드
- Active channel, Ferroelectric gate, Flexible nonvolatile memory, Gate insulator, Non-Volatile Memory(NVM), Oxide semiconductor, Thin-Film Transistor(TFT), organic ferroelectric, thin film(TF)