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Conference Paper
Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channel and Organic Ferroelectric Gate Insulator
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- Authors
- S. M. Yoon, S. W. Jung, S. H. Yang, C. W. Byun, M. K. Ryu, S. H. Ko Park, S. Y. Kang, C. S. Hwang, G. G. Lee, E. Tokumitsu, H. Ishiwara
- Issue Date
- 2010-06
- Citation
- Asian Meeting on Ferroelectricity (AMF) 2010 / Asian Meeting on Electroceramics (AMEC) 2010, pp.321-321
- Publisher
- 한국세라믹학회
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Active channel, Ferroelectric gate, Flexible nonvolatile memory, Gate insulator, Nonvolatile Memory(NVM), Oxide semiconductor, Thin-Film Transistor(TFT), organic ferroelectric, thin film(TF)