상세정보
학술지
High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer
- 발행일
- 202405
- 출처
- Journal of Alloys and Compounds, v.983, pp.1-10
- ISSN
- 0925-8388
- 출판사
- Elsevier BV
- 협약과제
- 23ZB1100, ICT 창의기술 개발, 이일민
- KSP 제안 키워드
- Cladding layer, High Temperature, Highly strained, Inas/gaas quantum dot, Laser diode(LD), Low temperature(LT), Quantum Dot(QD), Strained layer, continuous wave(CW), quantum dot laser