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Journal Article High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer
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Authors
HoSung Kim, Seungchul Lee, Young-Ho Ko, Joon Tae Ahn, Kap-Joong Kim, Duk-Jun Kim, Dae-Myeong Geum, Won Seok Han
Issue Date
2024-05
Citation
Journal of Alloys and Compounds, v.983, pp.1-10
ISSN
0925-8388
Publisher
Elsevier BV
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.jallcom.2024.173823
Project Code
23ZB1100, Development of Creative Technology for ICT, Lee Il Min
KSP Keywords
Cladding layer, High Temperature, Highly strained, Inas/gaas quantum dot, Laser diode(LD), Low temperature(LT), Quantum Dot(QD), Strained layer, continuous wave(CW), quantum dot laser
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