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Conference Paper Highly efficient vertical outgassing channel technique for direct wafer bonding and III-V membrane regrowth
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Authors
Honghwi Park, Hosung Kim, Dong-Hun Lee, Won Seok Han
Issue Date
2024-01
Citation
한국반도체 학술대회 (KCS) 2024, pp.1-3
Language
Korean
Type
Conference Paper
KSP Keywords
Direct wafer bonding, Highly efficient, III-V
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