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Journal Article
Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer
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- Authors
- Kyunghee Choi, Sooji Nam, Yong-Hae Kim, Himchan Oh, Inseo Kim, Kimoon Lee, Sung Haeng Cho
- Issue Date
- 2024-05
- Citation
- ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466
- ISSN
- 1944-8244
- Publisher
- American Chemical Society
- Language
- English
- Type
- Journal Article
- Abstract
- p-type thin-film transistors (pTFTs) have proven to be a significant impediment to advancing electronics beyond traditional Si-based technology. A recent study suggests that a thin and highly crystalline Te layer shows promise as a channel for high-performance pTFTs. However, achieving this still requires specific conditions, such as a cryogenic growth temperature and an extremely thin channel thickness on the order of a few nanometers. These conditions critically limit the practical feasibility of the fabrication process. Here, we report a high-performance pTFT incorporating a 60-nm-thick highly crystalline Se-Te alloyed channel layer, produced using pulsed laser ablation at room temperature. The Se0.5Te0.5 alloy system enhances crystalline temperature and widens the band gap compared to a pure Te channel. Consequently, this approach results in a field-effect mobility of 3 cm2/V·s, with an on/off current ratio of 3 × 105, a subthreshold slope of 2.1 V/decade, and a turn-on voltage of 6.5 V, achieved through conventional annealing at 250 °C. To demonstrate its applicability in complementary circuit applications, we integrate a complementary-type inverter using a p-type Se0.5Te0.5 TFT and an n-type Al-doped InZnSnO, demonstrating a high voltage gain of 12 and a low static power consumption of 17 nW. This suggests that the Se-Te alloyed channel approach paves the way to a more straightforward and cost-effective process for Te-based pTFT devices and their applications.
- KSP Keywords
- Al-doped, Alloy system, Channel layer, Channel thickness, Complementary circuits, Crystalline temperature, Fabrication process, Growth temperature, High performance, High voltage gain, Low Static Power