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Journal Article
X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling
- Authors
- Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung-gue Min, Dongmin Kang
- Issue Date
- 2024-05
- Citation
- Electronics Letters, v.60, no.10, pp.1-3
- ISSN
- 0013-5194
- Publisher
- John Wiley & Sons Ltd.
- Language
- English
- Type
- Journal Article
- Abstract
- This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class‐F output matching circuit is proposed. DynaFET modelling for GaN HEMT is utilized for accurate HPA MMIC design. The proposed quasi Class‐F HPA MMIC, fabricated using ETRI's 0.15 µm GaN process, achieves an output power of 43.5∼44.5 dBm with a power‐added efficiency of 36∼40.7% within the 9.1∼10.3 GHz frequency bandwidth.
- KSP Keywords
- GaN HEMT, Gallium nitride (gan), High-electron mobility transistor(HEMT), Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Output power, frequency bandwidth, high power amplifier, integrated circuit(IC), matching circuit, output matching
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
