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Conference Paper
Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs
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- Authors
- S.-J. Chang, D.-S. Kim, H.-W. Jung, D. Kim, I.-G. Choi, Y.-S. Noh, S.-H. Lee, S.-I. Kim, H.-K. Ahn, J.-W. Lim, D.-M. Kang
- Issue Date
- 2024-06
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- GaN-Based, Radiation tolerance, T-Gate, device performance, head size