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Conference Paper
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
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- Authors
- Hyun-Wook Jung, Sung-Jae Chang, Dong-Min Kang
- Issue Date
- 2024-10
- Citation
- International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This study systematically analyzes the impact of gate length scaling on the DC and RF performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). By examining transfer characteristics for various gate lengths, we observed significant changes in threshold voltage (VTH), subthreshold swing (SS), and drain-induced barrier lowering (DIBL), particularly when the gate length is below 0.1 μ m. These changes indicate the onset of strong short-channel effects (SCE). Although strong SCE occurs at a gate length of 0.1 μm, the highest cutoff frequency is achieved at this gate length. Our findings provide optimal design guidelines for scaled GaN HEMTs and contribute to the development of advanced RF devices.
- KSP Keywords
- AlGaN/GaN HEMTs, DC and RF performance, High-electron mobility transistor(HEMT), Length scaling, Optimal Design, RF devices, cutoff frequency, design guidelines, drain-induced barrier lowering(DIBL), gate length, short-channel effects