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0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band
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- Authors
- Junhyung Jeong, Kyujun Cho, Junhyung Kim, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung-gue Min, Jongyul Park, Gyejung Lee, Dongmin Kang
- Issue Date
- 2024-10
- Citation
- International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents the characteristics of ETRI's 0.15μ m GaN high-electron-mobility transistor (HEMT) and high-power amplifier (HPA) monolithic microwave integrated circuits (MMICs) for the 6G upper-mid band. To realize the high output power and efficiency characteristics for 6G communications, a 0.15μ m GaN HEMT and MMIC process was developed. This process developed by ETRI used a modified epitaxial structure and a field plate structure to achieve high voltage stability and enhanced large-signal performance. As measurements of 6F75 GaN HEMT device revealed a cutoff frequency of 40.3 GHz and a maximum oscillation frequency of 159 GHz. Load-pull measurements results at 28 GHz achieved an output power of 31.5 dBm, a PAE of 46%, and a power density of 3.1 W/mm. The fabricated Ku-band HPA MMIC achieved a small signal gain of 28 dB, an output power of 34.6 dBm, and a PAE of 31% over the 15.717.3 GHz band.
- KSP Keywords
- 28 GHz, Epitaxial structure, Field plate, GHz band, GaN HEMT, GaN HPA, High Voltage, High-electron mobility transistor(HEMT), Ku-Band, Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC)