BROWSE
Detail
Conference Paper
3-dB Bandwidth Enhancement via Mesa-Diameter Reduction in a InGaAs/InP Modified Uni-Travelling Carrier Photodiode Structure
Cited 0 time in 
Share 
Share
- Authors
- Duk-Jun Kim, Shinmo An, Dong-Hun Lee, Seok-Jun Yun, Young-Tak Han
- Issue Date
- 2024-10
- Citation
- International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1460-1461
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- Lens-integrated InGaAs/InP photodiodes whose mesa diameters range from 7 to 25 micrometers were fabricated by applying a wet-etch photodiode-mesa forming process to a 2-inch semi-insulating InP wafer with a modified uni-travelling carrier epitaxial structure. It was experimentally confirmed that the mesa diameters less than 14 micrometers produce a saturated maximum 3-dB bandwidth of about 45 GHz.
- KSP Keywords
- 3-dB bandwidth, 45 GHz, Bandwidth enhancement, Diameter reduction, Epitaxial structure, Forming processes, Semi-Insulating, Wet etch, uni-travelling carrier photodiode