BROWSE
Detail
Conference Paper
GaAs mHEMT Technology Achieving a High Cut-off Frequncy of 446 GHz with a Gate Length of 75 nm
Cited 0 time in 
Share 
Share
- Authors
- Jong Yul Park, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Hong-Gu Ji, Junhyung Jeong, Junhyung Kim, Gyejung Lee, Kyujun Cho, Dong Min Kang
- Issue Date
- 2024-10
- Citation
- International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1468-1469
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This work explores GaAs mHEMTs with an InGaAs channel. By using recess wet etching process, a cut-off frequency (ft) of 446 GHz was achieved with a gate length (Lg) of 75 nm. This result is the highest record for GaAs mHEMTs in the gate length range of 70-80 nm and highlights the potential of mHEMTs as a cost-effective solution for 6G MMIC applications.
- KSP Keywords
- 5 nm, 6 GHz, GaAs mHEMT, InGaAs channel, Wet etching process, cost-effective, cutoff frequency, gate length