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Journal Article
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
- Authors
- Junhyung Kim, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Junhyung Jeong, Hong-Gu Ji, Woojin Chang, Jong-Min Lee, Dong-Min Kang
- Issue Date
- 2024-10
- Citation
- ELECTRONICS, v.13, no.20, pp.1-8
- ISSN
- 2079-9292
- Publisher
- MDPI
- Language
- English
- Type
- Journal Article
- Abstract
- Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are highly promising for high-frequency and high-power applications due to their superior properties, such as a wide energy bandgap and high carrier density. The performance of GaN HEMTs is significantly influenced by the interfacial states of the AlGaN barrier, and gate annealing has emerged as a key process for reducing leakage currents and enhancing DC/RF characteristics. This research investigates the impact of gate annealing on AlGaN/GaN HEMTs, focusing on two main aspects: leakage current reduction and improvements in DC and RF efficiency. Through comprehensive electrical analysis, including DC and RF measurements, the effects of gate annealing were experimentally evaluated. The results show a significant reduction in gate leakage current and noticeable improvements in DC/RF performance for the devices that underwent gate annealing. The study confirms that the annealing process can effectively enhance device performance by modifying the material properties at the gate interface.
- KSP Keywords
- AND gate, AlGaN/GaN HEMTs, Carrier density, Electrical analysis, Energy band gap, Frequency efficiency, Gallium nitride (gan), Gate annealing, High frequency(HF), High power applications, High-electron mobility transistor(HEMT)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
