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Conference Paper
Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process
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- Authors
- Junhyung Kim, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Junhyung Jeong, Hong-Gu Ji, Woojin Chang, Jong-Min Lee, Dong-Min Kang
- Issue Date
- 2024-10
- Citation
- International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A critical factor in optimizing GaN HEMT performance is minimizing Ohmic contact resistance, which is heavily influenced by the annealing process parameters. This study investigates the impact of the ramp-up rate during a two-step Ohmic annealing process on the electrical characteristics of GaN HEMTs. By varying the ramp-up rate between 23°C/sec and 38.3°C/sec during the second annealing step, we observed significant improvements in device performance. A faster ramp-up rate resulted in a 34% reduction in contact resistance and a 7% reduction in sheet resistance, along with enhanced uniformity across wafer.
- KSP Keywords
- Contact resistance(73.40.Cg), Critical factors, Electrical characteristics, GaN HEMT, Ohmic contact resistance, Process Parameters, Two-Step, annealing process, device performance, ramp-up, sheet resistance