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A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology
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- Authors
- Woojin Chang, Jongmin Lee, Hong Gu Ji, Junhyung Jeong, Kyu Jun Cho, Byoung-Gue Min, Junhyung Kim, Dong Min Kang
- Issue Date
- 2024-11
- Citation
- International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper shows the results of designing and fabricating a Ku-band low-noise amplifier (LNA) MMIC using ETRI's 0.15-μm AlGaN/GaN HEMT (High Electron Mobility Transistor) on a SiC substrate. In order to enhance the noise figure and gain of the LNA, the sources of GaN HEMT devices were connected to ground using microstrip lines acting as inductors. The measured results of the designed and manufactured Ku-band LNA were presented a 3-dB bandwidth of 3.5 GHz, a gain (S21) of 30~33 dB, an input matching (S11) of - 7~-3 dB, an output matching (S22) of -19~-4 dB, and an isolation (S12) of -67~-59 dB at frequencies of 16.5~20.0 GHz. The characteristics of the noise figure of the LNA were measured at 1.7~2.3 dB in the same frequency range. And the measured results of the Ku-band LNA shows a small-signal gain (S21) of 25~33 dB, an input matching (S11) of -5~-2 dB, an output matching (S22) of -5~-3 dB, and an isolation (S12) of -67~-60 dB at frequencies of 15.7~17.2 GHz. The noise figures of the LNA were measured at 1.7~2.3 dB in the same frequency range. The chip size is 2.3 mm x 1.2 mm including the input/output pads and the DC input pads.
- KSP Keywords
- 2 mm, 3-dB bandwidth, 3.5 GHz, AlGaN/GaN HEMTs, Frequency range, GaN HEMT devices, GaN HEMT technology, High-electron mobility transistor(HEMT), Input matching, Ku-Band, Low-Noise Amplifier(LNA)