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Conference Paper Employment of 3 nm-thick h-BN passivation layer for RF performance improvement in GaN-based HEMTs
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Authors
Sung-Jae Chang, Seokho Moon, Hyun-Wook Jung, Il-Gyu Choi, Youn-Sub Noh, Seong-Il Kim, Sang-Heung Lee, Ho-Kyun Ahn, Jong-Won Lim, Jong Kyu Kim, Dong-Min Kang
Issue Date
2024-11
Citation
International Workshop on Nitride Semiconductors (IWN) 2024, pp.1-2
Language
English
Type
Conference Paper
KSP Keywords
GaN-Based, RF performance, hexagonal boron nitride(hBN), passivation layer, performance improvement
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