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Journal Article
Rapid activation of a solution-processed aluminum oxide gate dielectric through intense pulsed light irradiation
- Authors
- Yeon-Wha Oh, Hoon Kim, Lee-Mi Do, Kyu-Ha Baek, Il-Suk Kang, Ga-Won Lee, Chan-mo Kang
- Issue Date
- 2024-11
- Citation
- RSC Advances, v.14, no.50, pp.37438-37444
- ISSN
- 2046-2069
- Publisher
- Royal Society of Chemistry
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we report rapid activation of a solution-processed aluminum oxide gate dielectric film to reduce its processing time under ambient atmosphere. Aluminum precursor films were exposed to a high energy light-pulse and completely converted into dielectric films within 30 seconds (450 pulses). The aluminum oxide gate dielectric film irradiated using intense pulsed light with 450 pulses exhibits a smooth surface and a leakage current density of less than 10−8 A cm−2 at 2 MV cm−1. Moreover, dielectric constants of the aluminum oxide layer were calculated to be approximately 7. Finally, we fabricated a solution-processed indium gallium zinc oxide thin-film transistor with AlOx using intense pulsed light irradiation, exhibiting a field-effect mobility of 2.99 cm2 V−1 s−1, threshold voltage of 0.73 V, subthreshold swing of 180 mV per decade and Ion/Ioff ratio of 3.9 × 106
- KSP Keywords
- 3 V, Aluminum oxide layer, Dielectric Constant, Gate dielectric film, High energy, Indium Gallium Zinc Oxide(IGZO), Leakage current density, Oxide gate dielectric, Precursor film, Smooth surface, Solution-processed
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC)
(CC BY NC)
