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An 8.9-17.3 GHz Low Noise Amplifier in Enhancement-Mode GaAs 0.15-um pHEMT process
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- Authors
- Sunwoo Kong, Hui Dong Lee, Seunghyun Jang, Seunghun Wang, Bonghyuk Park
- Issue Date
- 2024-11
- Citation
- Asia-Pacific Microwave Conference (APMC) 2024, pp.1-3
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents an enhancement-mode (E-mode) Gallium Arsenide (GaAs) 0.15-um pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) which employs a positive gate bias condition. Under the 3-dB bandwidth of 8.9 to 17.3 GHz, the proposed LNA achieves a peak gain of 20.7 dB with a noise figure (NF) ranging from 0.75 to 1.5 dB. The measured input-referred 1-dB compression point (P1dB) is -11.9 dBm. The LNA consumes 34.8 mA from a 3 V supply and occupies a die area of 1.44 mm2
- KSP Keywords
- 1-dB compression point, 3 V, 3-dB bandwidth, Enhancement mode(E-mode), Gallium Arsenide, High-electron mobility transistor(HEMT), Low-Noise Amplifier(LNA), gate bias, noise figure, peak gain