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Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors
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- Authors
- Heetae Kim, Seohak Park, Johak Jeong, Jihoon Jeon, Hoseok Lee, Chihun Sung, Jeho Na, Min Ju Kim, Seong Keun Kim, Sung-Yool Choi, Keun Heo, Sung Haeng Cho, Byung Jin Cho
- Issue Date
- 2024-12
- Citation
- IEEE Electron Device Letters, v.45, no.12, pp.2431-2434
- ISSN
- 0741-3106
- Publisher
- Institute of Electrical and Electronics Engineers
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 × 10-16 A/μ m, even after the high-k dielectric crystallization process.
- KSP Keywords
- 1T-1C DRAM, Cell transistor, Electrical performance, High temperature process, High-K dielectric, High-k capacitor, K-value, Low leakage current, Sampling Time(Ts), Ultra-low power(ULP), amorphous indium-gallium-zinc oxide(a-IGZO)