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Journal Article
β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV
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- Authors
- Kyu Jun Cho, Woojin Chang, Hoon-Ki Lee, Jae Kyoung Mun
- Issue Date
- 2024-06
- Citation
- Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5
- ISSN
- 1229-7607
- Publisher
- The Korean Institute of Electrical and Electronic Material Engineers
- Language
- English
- Type
- Journal Article
- Abstract
- Lateral Schottky barrier diodes (SBD) were fabricated on a molecular beam epitaxy (MBE) grown, Si-doped β-Ga2O3 wafer measuring 1 cm by 1.5 cm. These devices featured varying anode to cathode distances and included anode connected field plate structures. A device with a 25 μm anode to cathode spacing exhibited a high breakdown voltage exceeding 3.6 kV. A smaller device with a 10 μm anode to cathode spacing demonstrated a Ron,sp (specific on resistance) of 0.1508 Ω·cm2 and a power figure of merit of 18.87 MW/cm2. The incorporation of titanium, characterized by a relatively low work function, as the Schottky contact enabled the achievement of a very low turn-on voltage and a sub-60 mV/dec subthreshold swing.
- KSP Keywords
- Field plate, Figure of Merit(FoM), High breakdown voltage, Molecular beam epitaxy(MBE), Plate structure, Schottky contacts, Si-doped, Sub-60 mV/dec, low turn-on voltage, low work function, schottky barrier diode(SBD)