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Conference Paper
Separation Feasibility of 2D Material-Assisted GaN Epitaxy :The Role of Low-Temperature Buffer Layer and MOCVD Growth Techniques
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- Authors
- Hoe-Min Kwak, Jeongwoon Kim, Jaeyoung Baik, Dong-Seon Lee
- Issue Date
- 2024-07
- Citation
- Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM) 2024, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- 2D material, GaN epitaxy, Low-temperature buffer layer, MOCVD growth