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Conference Paper GaN current aperture vertical electron transistor for transferrable high-power electronics by using 2D materials

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Authors: Hyeon-Tak Kwak

Issue Date: 2024-07

Citation: Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM) 2024, pp.1-1

Language: English

Type: Conference Paper

KSP Keywords: 2D material, High-power electronics

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