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Conference Paper Electrical characteristics of regrown AlGaN/GaN HEMT for implementation of current aperture vertical electron transistors
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Authors
곽현탁, 곽희민, 배성범, 이형석
Issue Date
2024-09
Citation
한국LED·광전자학회 학술대회 2024, pp.1-1
Language
Korean
Type
Conference Paper
KSP Keywords
AlGaN/GaN HEMTs, electrical characteristics