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A 120 GHz gm-boosting Low-Noise Amplifier in 40-nm CMOS
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- Authors
- In Cheol Yoo, Dong Ouk Cho, Dong-Woo Kang, Bontae Koo, Chul Woo Byeon
- Issue Date
- 2025-01
- Citation
- IEEE Transactions on Circuits and Systems II: Express Briefs, v.72, no.1, pp.153-157
- ISSN
- 1549-7747
- Publisher
- Institute of Electrical and Electronics Engineers
- Language
- English
- Type
- Journal Article
- Abstract
- This brief presents the design of a 120 GHz gm-boosting low-noise amplifier (LNA) in 40-nm CMOS. The proposed LNA consists of a single-stage differential gm-boosting common-gate (CG) amplifier and a four-stage differential capacitance-neutralized common-source amplifier. A triple-coupled transformer-based gm-booting technique in the CG stage enhances gain and noise figure (NF) performances. Implemented in 40 nm CMOS, the proposed LNA achieves a measured power gain of 23.8 dB at 123 GHz with a 3-dB bandwidth of 10 GHz. The lowest NF is 5.0 dB at 123 GHz and the NF is below 6.5 dB from 114 to 128 GHz. The LNA consumes 26 mW from a 1-V supply, with a core chip area of 0.25 mm × 0.70 mm.
- KSP Keywords
- 10 Ghz, 120 GHz, 28 GHz, 3-dB bandwidth, 40 nm, Chip area, Coupled transformer, Differential capacitance, Low-Noise Amplifier(LNA), Power gain, common gate