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Journal Article
Two-step large-area synthesis of Bi2Se3 topological insulator thin films via bismuth evaporation and selenization
- Authors
- Dae-Hyung Cho, Tae-Ha Hwang, Yong-Duck Chung, So-Young Lim, Woo-Jung Lee
- Issue Date
- 2025-03
- Citation
- Surface and Coatings Technology, v.499, pp.1-9
- ISSN
- 0257-8972
- Publisher
- Elsevier BV
- Language
- English
- Type
- Journal Article
- Abstract
- Bi2Se3 is recognized as one of the most promising topological insulators, with substantial potential for industrial applications, particularly as a qubit in quantum computing. Realizing large-area growth using cost-effective methods is crucial for practical applications. This study presents an innovative approach for fabricating high-quality large-area Bi2Se3 thin films by combining Bi thermal evaporation with cracker selenization, which inherently supports scalability. The amorphous precursor—a Bi film capped with a Se layer—reacts with highly reactive cracked Se, forming crystalline Bi2Se3 thin films with layered structures. Prolonged selenization enhances the crystallinity of the Bi2Se3 thin films and significantly reduces their oxygen content by effectively substituting the O atoms with Se atoms. Thicker precursors require extended selenization to improve their crystallinity and are more susceptible to stress. Electrical transport measurements of Bi2Se3 films formed via selenization for 8 h reveal a long phase coherence length of >375 nm and a single surface state with a spin texture, which are unique properties of topological insulators. Uniform physical and optical properties are achieved across a substrate with a large 4-in diameter under optimized conditions. This novel method exhibits great potential for the industrial fabrication of high-quality large-area Bi2Se3 topological insulator thin films.
- KSP Keywords
- 5 nm, Bi film, Electrical transport measurements, High-quality, Industrial Applications, Innovative approach, Layered structure, O atoms, Oxygen content, Phase coherence length, Physical and optical properties
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC)
(CC BY NC)
