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Journal Article
An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 πm Gallium Nitride-on-Silicon Carbide Process
- Authors
- Sang-Heung Lee, Hokyun Ahn, Hyunwook Jung, Seong-Il Kim, Ilgyu Choi, Dong Min Kang
- Issue Date
- 2025-01
- Citation
- Applied Science and Convergence Technology, v.34, no.1, pp.42-45
- ISSN
- 2288-6559
- Publisher
- νκ΅μ§κ³΅νν
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, an X-band low-noise amplifier (LNA) microwave monolithic integrated circuit was designed and fabricated using 0.2 ΞΌm gallium nitride (GaN)-on-silicon carbide process technology. The X-band LNA was implemented in a two-stage cascade structure employing a small-signal model that included noise modelling. In the first stage, the bandwidth, noise figure, and stability were optimized through source degeneration technique. Measurements indicated that the GaN LNA achieved a small-signal gain of 19 β 20 dB and a noise figure of 1.70 β 1.99 dB in the 8 β 10 GHz range. Compared with simulations, the small-signal gain was observed to shift down by 2 β 3 dB, while the noise figure fluctuated by 0.5 dB around 9.5 GHz. The error in the noise figure remained below 0.08 dB in the 9 β 11 GHz range, validating the accuracy of the small-signal model in this frequency band.
- KSP Keywords
- 10 Ghz, 11 GHz, 9.5 GHZ, Cascade structure, First stage, GHz range, Gallium nitride (gan), Low-Noise Amplifier(LNA), Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Small signal gain
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
