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Journal Article
An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 πm Gallium Nitride-on-Silicon Carbide Process
- Authors
- Sang-Heung Lee, Hokyun Ahn, Hyunwook Jung, Seong-Il Kim, Ilgyu Choi, Dong Min Kang
- Issue Date
- 2025-01
- Citation
- Applied Science and Convergence Technology, v.34, no.1, pp.42-45
- ISSN
- 2288-6559
- Publisher
- νκ΅μ§κ³΅νν
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, an X-band low-noise amplifier (LNA) microwave monolithic integrated circuit was designed and fabricated using 0.2 ΞΌm gallium nitride (GaN)-on-silicon carbide process technology. The X-band LNA was implemented in a two-stage cascade structure employing a small-signal model that included noise modelling. In the first stage, the bandwidth, noise figure, and stability were optimized through source degeneration technique. Measurements indicated that the GaN LNA achieved a small-signal gain of 19 β 20 dB and a noise figure of 1.70 β 1.99 dB in the 8 β 10 GHz range. Compared with simulations, the small-signal gain was observed to shift down by 2 β 3 dB, while the noise figure fluctuated by 0.5 dB around 9.5 GHz. The error in the noise figure remained below 0.08 dB in the 9 β 11 GHz range, validating the accuracy of the small-signal model in this frequency band.
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
