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Sigmoid Probabilistic Bits Using SiOx Threshold Switching Devices for Probabilistic Computing
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- Authors
- Hyeonsik Choi, Jihyun Kim, Jaehyun Moon, Seung-Youl Kang, Jiyong Woo
- Issue Date
- 2025-04
- Citation
- IEEE Transactions on Electron Devices, v.72, no.4, pp.1738-1744
- ISSN
- 0018-9383
- Publisher
- Institute of Electrical and Electronics Engineers
- Language
- English
- Type
- Journal Article
- Abstract
- We present probabilistic bits (p-bits) implemented using a simple and fabrication-friendly Ti/SiOx/Ti stack for probabilistic computing. Sputterdeposited thin SiOx films (<10 nm) exhibit threshold switching (TS) behavior under dc characterization, producing continuous output voltage (Vout) oscillations in response to a given input voltage (Vin) pulse. When a chemically reactive Ti scavenging layer is introduced, nonuniform TS properties are observed, resulting in switching voltage (or resistance) variability and unexpected oscillation failures. Consequently, Vout oscillations begin to be detected in the form of random spikes, emulating the probability of representing data as 1 (P1). Notably, we demonstrate that when the SiOx layer is sandwiched between Ti scavengers at both interfaces, the value of P1 can be controlled between 0 and 1 in an inversely proportional relationship to Vin. This sigmoid P1 curve derived from Ti/SiOx/Ti p-bits plays a crucial role in executing simulated annealing (SA) algorithms. This capability is validated through MATLAB simulations, where the approach is applied to solve vehicle routing problems (VRPs) by identifying optimal solutions.
- KSP Keywords
- Input voltage, Matlab Simulations, Output Voltage, Simulated Annealing(SA), Switching devices, Threshold Switching, Vehicle routing problem(VRP), dc characterization, optimal solution, probabilistic computing, scavenging layer