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Journal Article
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
- Authors
- Junhyung Kim, Junhyung Jeong, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Hong-Gu Ji, Dong-Min Kang
- Issue Date
- 2025-05
- Citation
- Electronics Letters, v.61, no.1, pp.1-4
- ISSN
- 0013-5194
- Publisher
- John Wiley & Sons Ltd.
- Language
- English
- Type
- Journal Article
- Abstract
- This study examines the effect of gate recess depth on the electrical and RF performance of AlGaN/GaN high electron mobility transistors (HEMTs) before and after die-attach. Devices with greater recess depths exhibited notably larger improvements in transconductance and RF metrics (ft, fmax) due to mechanical and thermal stresses induced by packaging, which partially mitigated damage caused by recess etching. However, these recessed devices simultaneously showed substantial increases in gate and drain leakage currents due to activation of interface traps, highlighting the complex trade-off effects introduced by deep recess structures and packaging processes.
- KSP Keywords
- AlGaN/GaN HEMTs, Depth-dependent, Die-Attach, Drain leakage current, Gate recess, High-electron mobility transistor(HEMT), Interface trap, Packaging processes, RF performance, Trade-off, recess depth
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
