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Journal Article
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
- Authors
- Junhyung Kim, Junhyung Jeong, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Hong-Gu Ji, Dong-Min Kang
- Issue Date
- 2025-05
- Citation
- Electronics Letters, v.61, no.1, pp.1-4
- ISSN
- 0013-5194
- Publisher
- John Wiley & Sons Ltd.
- Language
- English
- Type
- Journal Article
- KSP Keywords
- AlGaN/GaN HEMTs, Depth-dependent, Gate recess, recess depth
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
