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Journal Article
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
- Authors
- Honghwi Park, Seungchul Lee, Won Seok Han, Daehwan Jung, HoSung Kim
- Issue Date
- 2025-05
- Citation
- Laser and Photonics Reviews, v.권호미정, pp.1-9
- ISSN
- 1863-8880
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- Epitaxial growth of III-V light sources onto silicon (Si) platforms is technologically important for numerous applications in photonics. High-performance quantum dot (QD) lasers on Si have been carried out using molecular beam epitaxy systems because they can permit precise epitaxy control for sophisticated III–V QD growth and low epitaxy temperatures. Although the metal-organic chemical vapor deposition system (MOCVD) is the choice of the III–V optoelectronics industry and more advantageous for Si photonic platform integrations, no high-performance, reliable III–V lasers epitaxially integrated onto Si have been demonstrated using MOCVD. Here, all-MOCVD-grown III–V QD lasers on Si with a threshold current density of 255 A cm−2 are shown, lasing up to 115 °C, and extrapolated device lifetimes exceeding 20 years when aged at 55 °C. These impressive results are achieved by solving two critical issues, which are the growth of high-quality QDs and two-step p-Al
0.4 Ga0.6 As cladding growth without free carrier absorption. This work paves the way for commercializing Si photonics integrated with efficient and reliable III-V on-chip light sources in a scalable fashion.
- KSP Keywords
- Critical issues, Epitaxial growth, Free carrier absorption, High performance, High-quality, III-V, Light source, Metalorganic chemical vapor deposition, Molecular beam epitaxy(MBE), Quantum dot(Qdot), Quantum dot laser(QDL)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
