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Compact X-band 30W Power Amplifier MMIC using 0.2 um GaN HEMT Technology
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- Authors
- YounSub Noh, JongWon Lim, Sung-Bum Bae, ByoungChul Jun, JiHun Kwon
- Issue Date
- 2025-07
- Citation
- International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2025, pp.1440-1442
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper describes a 2-stage compact X-band 30W GaN (Gallium Nitride) power amplifier MMIC (Monolithic Microwave Integrated Circuit) operating from 8.5 GHz to 10.5 GHz. The PA (Power Amplifier) MMIC is fabricated using WAVICE 0.2 μm GaN-on-SiC HEMT (High Electron Mobility Transistor) technology. With a compact size of 3.0 mm × 3.0 mm, the PA MMIC delivers a saturated output power of typical 33.8W (45.3 dBm) and PAE (Power Added Efficiency) of typical 47 % at a 28 V of drain voltage.
- KSP Keywords
- 5 GHz, Band 3, Compact size, Drain voltage, GaN HEMT technology, GaN-on-SiC HEMT, Gallium Nitride, Integrated circuit(IC), Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Power added efficiency(PAE)