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Journal Article
Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs
- Authors
- Hyun-Wook Jung, Il-Gyu Choi, Dohyun Kim, Sung-Jae Chang, Ho-Kyun Ahn, Jong-Won Lim, Dong Min Kang, Sang Min Won
- Issue Date
- 2025-08
- Citation
- ETRI Journal, v.권호미정, pp.1-12
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원
- Language
- Korean
- Type
- Journal Article
- Abstract
- This study systematically analyzes the effects of lateral scaling on the direct current (DC) and radio frequency (RF) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by varying the geometric parameters gate length (L
G ), gate width (WG ), number of fingers (NF ), source-to-gate distance (LSG ), and source-to-drain distance (LSD ). LG scaling enhances transconductance (gm ) and cut-off frequency (fT ) but strengthens short-channel effects and reduces breakdown voltage (VBR ). Drain current (ID ) remains largely constant across varying WG and NF , but changes in these parameters significantly affect RF characteristics because of increased parasitic capacitance and gate resistance (RG ). A reduced LSG enhances DC performance by increasing ID and gm but minimally impacts RF characteristics thanks to increased gate-to-source parasitic capacitance (Cgs ). Decreasing LSD significantly boosts fT and maximum oscillation frequency (fmax ) by reducing carrier transit time, but severely reduces VBR by enhancing electric field concentration. These findings provide a detailed understanding of the geometric dependencies and offer design guidelines for optimizing DC and RF performance.
- KSP Keywords
- AND gate, AlGaN/GaN HEMTs, Breakdown Voltage, DC and RF performance, DC performance, Direct current(DC), Drain current, Electric Field, Electrical characteristics, Field concentration, Gate Width
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
