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Conference Paper
High-Performance P-Type Tellurium-Based Thin-Film Transistors on a 6-in. Wafer and Their Applications
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- Authors
- Sooji Nam, Chihun Sung, Jung Hoon Han, Kyunghee Choi, Sung Haeng Cho
- Issue Date
- 2025-05
- Citation
- Society for Information Display (SID) International Symposium 2025, pp.727-729
- Language
- English
- Type
- Conference Paper
- Abstract
- Here, we report on the sputtered p-type Tellurium (Te) thin-film transistors (TFTs) and circuits with high device performances. We also fabricate and optimize the device characteristics of p-type Te TFTs with sub-100 nm channel length using a novel photolithography method. Finally, vertically integrating p-type TFTs with n-type ones are demonstrated for monolithic 3- dimensional (M3D) applications.
- KSP Keywords
- Channel Length, Device characteristics, High performance, Thin-Film Transistor(TFT), n-Type, p-Type TFTs, thin film(TF)