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Conference Paper
Influence of Double-Deck T-gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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- Authors
- Jong Yul Park, Junhyung Jeong, Gyejung Lee, Kyujun Cho, Junhyung Kim, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Hong-Gu Ji, Dong-Min Kang
- Issue Date
- 2025-06
- Citation
- International Microwave Symposium (IMS) 2025, pp.874-877
- Language
- English
- Type
- Conference Paper
- Abstract
- This study investigates the impact of various Tgate structures on the performance of Al
0.3 Ga0.7 N/AlN/GaN HEMTs fabricated on SiC substrates. Five T-gate designs were analyzed, comprising a conventional T-gate and four double-deck T-gate variations. Reducing the width of the source-side 2nd foot resulted in a cut-off frequency (ft) improvement of up to 7 GHz, while the head position was found to have minimal impact. Through capacitance calculations, the contribution of the 2nd foot width to the ft enhancement was analyzed.
- KSP Keywords
- Cut-off frequency, Double-deck, GaN HEMT, Head position, T-Gate