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New insights into I-line stepper based InGaAs/InP double-heterojunction bipolar transistors (DHBTs)
- Authors
- Soo Cheol Kang, Jin Chul Cho, Jun-Hwan Shin, Dong Woo Park, Eui Su Lee
- Issue Date
- 2026-01
- Citation
- Materials Science in Semiconductor Processing, v.201, pp.1-7
- ISSN
- 1369-8001
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- InGaAs/InP double heterojunction bipolar transistors (DHBTs) are considered promising candidates for high-frequency power amplifier applications in wireless communication, aerospace, and radar systems. Although emitter scaling is essential to enhance the cut-off frequency (f
T ), the conventional use of electron beam lithography increases process complexity, production cost and reliability issues. As a cost-effective and yield-improving alternative, I-line stepper photolithography has recently regained attention. In this study, an InGaAs/InP DHBT with an emitter width (WE ) of 1 μm, an emitter length (LE ) of 10 μm and a base width (WB ) of 0.5 μm was fabricated using I-line stepper photolithography. By employing optimized epitaxial layers and Ohmic contact formation process, the device exhibits a current gain (β) of 40.7 at VCE = 0 V and an open-base common-emitter breakdown voltage (BVCEO ) of 5.1 V at JC = 1 kA/cm2. The fabricated InP DHBTs with WE = 1 μm demonstrate an fT = 262 GHz, indicating potential for applications in ICs operating data rates up to 80 Gbit/s ICs.
- KSP Keywords
- Base width, Breakdown Voltage, Contact formation process, Current Gain, Cut-off frequency, Double heterojunction bipolar transistor(DHBT), Electron beam lithography, Epitaxial layer, Hetero-junction Bipolar Transistor(HBT), High frequency(HF), High-frequency power amplifier
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC)
(CC BY NC)
