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Low-temperature hybrid microwave annealing process for high-performance indium–tungsten oxide thin-film transistors
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- Authors
- Hyun-Sik Choi, Seong-Hwan Lim, Jin-Wook Shin, Jong-Heon Yang, Won-Ju Cho
- Issue Date
- 2025-09
- Citation
- Applied Physics Letters, v.127, no.9, pp.1-7
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics
- Language
- English
- Type
- Journal Article
- Abstract
- A low-thermal-budget annealing process is essential for advancing high-performance thin-film transistors (TFTs) grown on thermally sensitive substrates. In this study, we demonstrated the effectiveness of hybrid microwave annealing (h-MWA) for indium-tungsten oxide (IWO) TFTs. The h-MWA-treated devices exhibited superior electrical characteristics, including a field-effect mobility (μ
FE ) of 30.75 cm2/V s, a subthreshold swing of 0.33 V/dec, and an on/off current ratio of 1.09 × 108, outperforming those treated by conventional thermal annealing, even under low effective temperatures and short annealing durations. Furthermore, h-MWA significantly enhanced device reliability under gate bias stress, mitigating time-dependent threshold voltage shifts (ΔVth ) and increasing charge trapping time (τ). These findings establish h-MWA as a transformative, low-temperature post-deposition annealing technique for high-performance IWO TFTs, suitable for advancing the development of energy-efficient, next-generation oxide electronics.
- KSP Keywords
- 3 V, Annealing technique, Charge trapping, Device reliability, Effective Temperature(ET), Electrical characteristics, High performance, Hybrid microwave annealing, Next-generation, Oxide electronics, Postdeposition annealing(PDA)