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Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation
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- Authors
- Sangyeob Kim, Jeongtae Kim, Dong-Seok Kim, Hyuncheol Bae, Min-Woo Ha, Ogyun Seok
- Issue Date
- 2026-01
- Citation
- Journal of Semiconductors, v.47, no.1, pp.1-7
- ISSN
- 1674-4926
- Publisher
- IOS Press
- Language
- English
- Type
- Journal Article
- Abstract
- This work presents a systematic analysis of proton-induced total ionizing dose (TID) effects in 1.2 kV silicon carbide (SiC) power devices with various edge termination structures. Three edge terminations including ring-assisted junction termination extension (RA-JTE), multiple floating zone JTE (MFZ-JTE), and field limiting rings (FLR) were fabricated and irradiated with 45 MeV protons at fluences ranging from 1 × 1012to 1 × 1014cm−2. Experimental results, supported by TCAD simulations, show that the RA-JTE structure maintained stable breakdown performance with less than 1% variation due to its effective electric field redistribution by multiple P+rings. In contrast, MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1% and 15.2%, respectively, under the highest fluence. These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened SiC power devices in space and other high-radiation environments.