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Journal Article Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation

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Authors: Sangyeob Kim, Jeongtae Kim, Dong-Seok Kim, Hyuncheol Bae, Min-Woo Ha, Ogyun Seok

Issue Date: 2025-08

Citation: Journal of Semiconductors, v.권호미정, pp.1-7

ISSN: 1674-4926

Publisher: IOS Press

Language: English

Type: Journal Article

DOI: https://dx.doi.org/10.1088/1674-4926/25040023

KSP Keywords: Proton Irradiation, SiC power devices, edge termination, radiation hardness

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