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Journal Article
A Ka-Band GaN LNA MMIC with External Source Interconnect for Gate-Side Parasitic Suppression
- Authors
- Woojin Chang, Jong Yul Park, Kyu Jun Cho, Junhyung Jeong, Hong-Gu Ji, Byoung-Gue Min, Jong-Min Lee, Junhyung Kim, Gyejung Lee, Dong Min Kang
- Issue Date
- 2025-12
- Citation
- ETRI Journal, v.권호미정, pp.1-16
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원
- Language
- English
- Type
- Journal Article
- Abstract
- This paper presents a Ka-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a GaN high-electron-mobility transistor (HEMT) structure designed to minimize gate–source parasitic capacitance (C
gs ). In conventional multigate GaN HEMTs, internal source interconnects tie split sources, increasing parasitic coupling near the gate and degrading the minimum noise figure (NFmin ) at millimeter-wave frequencies. To overcome this limitation, an external source interconnect is routed outside the active region, effectively suppressing gate-side parasitics and reducing Cgs , without compromising circuit integrity or layout compactness. The proposed five-stage common-source LNA MMIC, fabricated using ETRI's 0.15 μm GaN-on-SiC process, achieves a gain of 23–28 dB and a noise figure of 2.1–2.3 dB across 26–30 GHz. Compared with recently reported Ka-band GaN LNA MMICs, the design attains figures of merit: FoM1 = 724 GHz/mm2 and FoM2 = 0.72 GHz/mW·mm2. These improvements result from the reduced Cgs enabled by the external source interconnect and compact layout, confirming the suitability of the proposed HEMT structure for high-performance millimeter-wave front-end receivers requiring low-noise and efficient integration.
- KSP Keywords
- 2.4 GHz, 30 GHz, 72 GHz, Common-source LNA, Front-End, GaN HEMT, GaN on SiC, High performance, High-electron mobility transistor(HEMT), Ka-Band, Low-Noise Amplifier(LNA)
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
